Nuclear relaxation of dilute Cd dopants in liquid semiconducting Se_xTe_1-x alloysGASKILL, D. K; GARDNER, J. A; RASERA, R. L et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 7, pp 4320-4325, issn 0163-1829Article

Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H-SiC Epitaxial LayersMYERS-WARD, R. L; MAHADIK, N. A; WHEELER, V. D et al.Crystal growth & design. 2014, Vol 14, Num 11, pp 5331-5338, issn 1528-7483, 8 p.Article

Low-Phase-Noise Graphene FETs in Ambipolar RF ApplicationsMOON, J. S; CURTIS, D; ASBECK, P et al.IEEE electron device letters. 2011, Vol 32, Num 3, pp 270-272, issn 0741-3106, 3 p.Article

A new buffer layer for MOCVD growth of GaN on sapphireLI, X; FORBES, D. V; GU, S. Q et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1711-1714, issn 0361-5235Conference Paper

Growth of Ga_xIn_1-xAs_1-ySb_y alloys by metalorganic chemical vapor depositionLI SHUWEI; JIN YIXIN; ZHOU TIANMING et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1667-1670, issn 0361-5235Conference Paper

Growth, characterization, and modeling of ternary InGaAs-GaAs quatum wells by selective-area metalorganic chemical vapor depositionJONES, A. M; OSOWSKI, M. L; LAMMERT, R. M et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1631-1636, issn 0361-5235Conference Paper

Semi-insulating selective regrowth of surface light emitting diodesCHING-LONG JIANG; MASHAS, M; FERREIRA, M et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1621-1624, issn 0361-5235Conference Paper

The properties of MOVPE grown 1.3 μm DFB MQW lasers infilled with semi-insulating InP fabricated on semi-insulating substratesCARR, N; THOMPSON, J; JONES, G. G et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1617-1620, issn 0361-5235Conference Paper

The role of the V/III ratio in the growth and structural properties of metalorganic vapor phase epitaxy GaAs/Ge heterostructuresPELOSI, C; ATTOLINI, G; BOCCHI, C et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1723-1730, issn 0361-5235Conference Paper

Bilayer Graphene Grown on 4H-SiC (0001) Step-Free MesasNYAKITI, L. O; MYERS-WARD, R. L; CAMPBELL, P. M et al.Nano letters (Print). 2012, Vol 12, Num 4, pp 1749-1756, issn 1530-6984, 8 p.Article

Effects of deposition rate on the size of self-assembled InP islands formed on GaInP/GaAs (100) surfacesREAVES, C. M; BRESSLER-HILL, V; WEINBERG, W. H et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1605-1609, issn 0361-5235Conference Paper

Evidence for reductive elimination of H₂ in the decomposition of primary arsinesFOSTER, D. F; GLIDEWELL, C; WOOLLEY, G. R et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1731-1738, issn 0361-5235Conference Paper

Growth of GaInP/GaAsP short period superlattices by flow modulation organometallic vapor phase epitaxyWHITTINGHAM, K. L; EMERSON, D. T; SHEALY, J. R et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1611-1615, issn 0361-5235Conference Paper

Maskless selective area growth of InP on sub-μm V-groove patterned Si(001)SCHNABEL, R. F; KROST, A; GRUNDMANN, M et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1625-1629, issn 0361-5235Conference Paper

Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaNKELLER, B. P; KELLER, S; DENBAARS, S. P et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1707-1709, issn 0361-5235Conference Paper

Metalorganic vapor phase epitaxial growth of GaInAsP/GaAsKNAUER, A; ERBERT, G; GRAMLICH, S et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1655-1658, issn 0361-5235Conference Paper

Microstructural study of the effect of an excess of Y₂BaCuO₅ and BaSnO₃ doping on the texturing process of YBa₂Cu₃O_7-x bulk superconductorsDELAMARE, M. P; MONOT, I; WANG, J et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1739-1745, issn 0361-5235Conference Paper

The effect of organometallic vapor phase epitaxial growth conditions of Wurtzite GaN electron transport propertiesGASKILL, D. K; WICKENDEN, A. E; DOVERSPIKE, K et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1525-1530, issn 0361-5235Conference Paper

Thermodynamic modeling of As and P incorporation in Ga_xIn_1-xP_yAs_1-y epitaxial layers grown by organometallic vapor phase epitaxyJORDAN, A. S.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1649-1654, issn 0361-5235Conference Paper

Modulation spectroscopy as a tool for electronic material characterizationBOTTKA, N; GASKILL, D. K; SILLMON, R. S et al.Journal of electronic materials. 1988, Vol 17, Num 2, pp 161-170, issn 0361-5235Article

Graphene FETs for Zero-Bias Linear Resistive FET MixersMOON, J. S; SEO, H.-C; ASBECK, P et al.IEEE electron device letters. 2013, Vol 34, Num 3, pp 465-467, issn 0741-3106, 3 p.Article

Graphene FET-Based Zero-Bias RF to Millimeter-Wave DetectionMOON, J. S; SEO, H.-C; ASBECK, P et al.IEEE electron device letters. 2012, Vol 33, Num 10, pp 1357-1359, issn 0741-3106, 3 p.Article

Terahertz ellipsometry and terahertz optical-Hall effectHOFMANN, T; HERZINGER, C. M; TEDESCO, J. L et al.Thin solid films. 2011, Vol 519, Num 9, pp 2593-2600, issn 0040-6090, 8 p.Conference Paper

The effect of GaN and AlN buffer layers on GaN film properties grown on both C-plane and A-plane sapphire : III-IV nitrides and silicon carbideDOVERSPIKE, K; ROWLAND, L. B; GASKILL, D. K et al.Journal of electronic materials. 1995, Vol 24, Num 4, pp 269-273, issn 0361-5235Article

Basic studies of gallium nitride growth on sapphire by metalorganic chemical vapor deposition and optical properties of deposited layersNIEBUHR, R; BACHEM, K; DOMBROWSKI, K et al.Journal of electronic materials. 1995, Vol 24, Num 11, pp 1531-1534, issn 0361-5235Conference Paper